Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications

被引：20
|
作者：
Kim, Hee-Dong [1 ]
An, Ho-Myoung [1 ]
Kim, Tae Geun [1 ]
机构：
[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2012年 / 98卷
基金：
新加坡国家研究基金会;
关键词：
Resistive switching memory; Si3N4; Space charge limited current;
D O I：
10.1016/j.mee.2012.07.052
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the resistive-switching behavior of Si3N4 films using nitride-related traps in Ti/Si3N4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about +/- 2.5 V. Compared to Au/Si3N4/Ti memory cells, the set and reset current of Ti/Si3N4/Ti memory cells was decreased from 5 mu A and 1.5 mA to 40 nA and 1 mu A, respectively, at V-read = 0.1 V. In addition, Ti/Si3N4/Ti memory cells showed improved endurance characteristics over 2.7 x 10(3) cycles. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：351 / 354
页数：4
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