Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications

被引：20

作者：

Kim, Hee-Dong ^{[1
]}

An, Ho-Myoung ^{[1
]}

Kim, Tae Geun ^{[1
]}

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2012年 / 98卷

基金：

新加坡国家研究基金会;

关键词：

Resistive switching memory; Si3N4; Space charge limited current;

D O I：

10.1016/j.mee.2012.07.052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the resistive-switching behavior of Si3N4 films using nitride-related traps in Ti/Si3N4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about +/- 2.5 V. Compared to Au/Si3N4/Ti memory cells, the set and reset current of Ti/Si3N4/Ti memory cells was decreased from 5 mu A and 1.5 mA to 40 nA and 1 mu A, respectively, at V-read = 0.1 V. In addition, Ti/Si3N4/Ti memory cells showed improved endurance characteristics over 2.7 x 10(3) cycles. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：351 / 354

页数：4

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