Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode

被引：7
|
作者：
Xuan, Rong [1 ,2 ]
Kuo, Wei-Hong [1 ]
Hu, Chih-Wei [1 ]
Lin, Suh-Fang [1 ]
Chen, Jenn-Fang [2 ]
机构：
[1] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 310, Taiwan
[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期
关键词：
GAN;
D O I：
10.1063/1.4752113
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper presents an approach in fabricating normally off AlGaN/GaN high electron mobility transistors (HEMTs). The fabrication technique was based on the carbon-doped GaN epitaxy layers on silicon substrate and the nano rod structure of the gate region in AlGaN/GaN HEMTs. Using this method, the threshold voltage of AlGaN/GaN HEMTs can be shifted from -2 V in a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 2 V in an enhancement-mode (E-mode) AlGaN/GaN HEMT. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752113]
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页数：3
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