Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode

被引：7

作者：

Xuan, Rong ^{[1
,2
]}

Kuo, Wei-Hong ^{[1
]}

Hu, Chih-Wei ^{[1
]}

Lin, Suh-Fang ^{[1
]}

Chen, Jenn-Fang ^{[2
]}

机构：

[1] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 310, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期

关键词：

GAN;

D O I：

10.1063/1.4752113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents an approach in fabricating normally off AlGaN/GaN high electron mobility transistors (HEMTs). The fabrication technique was based on the carbon-doped GaN epitaxy layers on silicon substrate and the nano rod structure of the gate region in AlGaN/GaN HEMTs. Using this method, the threshold voltage of AlGaN/GaN HEMTs can be shifted from -2 V in a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 2 V in an enhancement-mode (E-mode) AlGaN/GaN HEMT. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752113]

引用

页数：3

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