Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode

被引：7

作者：

Xuan, Rong ^{[1
,2
]}

Kuo, Wei-Hong ^{[1
]}

Hu, Chih-Wei ^{[1
]}

Lin, Suh-Fang ^{[1
]}

Chen, Jenn-Fang ^{[2
]}

机构：

[1] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 310, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期

关键词：

GAN;

D O I：

10.1063/1.4752113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents an approach in fabricating normally off AlGaN/GaN high electron mobility transistors (HEMTs). The fabrication technique was based on the carbon-doped GaN epitaxy layers on silicon substrate and the nano rod structure of the gate region in AlGaN/GaN HEMTs. Using this method, the threshold voltage of AlGaN/GaN HEMTs can be shifted from -2 V in a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 2 V in an enhancement-mode (E-mode) AlGaN/GaN HEMT. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752113]

引用

页数：3

共 50 条

[31] Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment
He, Yun-Long
Wang, Chong
Mi, Min-Han
Zheng, Xue-Feng
Zhang, Meng
Zhao, Meng-Di
Zhang, Heng-Shuang
Chen, Li-Xiang
Zhang, Jin-Cheng
Ma, Xiao-Hua
Hao, Yue
CHINESE PHYSICS B, 2016, 25 (11)
[32] Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses
He, Yunlong
Li, Peixian
Wang, Chong
Li, Xiangdong
Zhao, Shenglei
Mi, Minhan
Pei, Jiuqing
Zhang, Jincheng
Ma, Xiaohua
Hao, Yue
APPLIED PHYSICS LETTERS, 2015, 107 (06)
[33] High-Voltage Enhancement/Depletion-mode AlGaN/GaN HEMTs on Modified SOI Substrates
Jiang, Qimeng
Liu, Cheng
Lu, Yunyou
Chen, Kevin J.
2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2013, : 407 - 410
[34] A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates
Wang, Hui
Wang, Ning
Jiang, Ling-Li
Lin, Xin-Peng
Zhao, Hai-Yue
Yu, Hong-Yu
CHINESE PHYSICS B, 2017, 26 (04)
[35] A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates
王辉
王宁
蒋苓利
林新鹏
赵海月
于洪宇
Chinese Physics B, 2017, 26 (04) : 424 - 428
[36] Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors
Thi Huong, Ngo
Comyn, Remi
Chenot, Sebastien
Brault, Julien
Damilano, Benjamin
Vezian, Stephane
Frayssinet, Eric
Cozette, Flavien
Rodriguez, Christophe
Defrance, Nicolas
Lecourt, Francois
Labat, Nathalie
Maher, Hassan
Cordier, Yvon
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 36 (02)
[37] Enhancement-mode AlGaN/AlN/GaN high electron mobility transistor with low on-state resistance and high breakdown voltage
Ohmaki, Yuji
Tanimoto, Masashi
Akamatsu, Shiro
Mukai, Takashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (42-45): : L1168 - L1170
[38] Enhancement-mode AlGaN/AlN/GaN high electron mobility transistor with low on-state resistance and high breakdown voltage
Ohmaki, Yuji
Tanimoto, Masashi
Akamatsu, Shiro
Mukai, Takashi
Japanese Journal of Applied Physics, Part 2: Letters, 2006, 45 (42-45):
[39] Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces
Tripathi, N.
Jindal, V.
Shahedipour-Sandvik, F.
Rajan, S.
Vert, A.
SOLID-STATE ELECTRONICS, 2010, 54 (11) : 1291 - 1294
[40] Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors
Wong, Yuen-Yee
Chang, Edward Yi
Huang, Wei-Ching
Lin, Yueh-Chin
Tu, Yung-Yi
Chen, Kai-Wei
Yu, Hung-Wei
APPLIED PHYSICS EXPRESS, 2014, 7 (09)

← 1 2 3 4 5 →