SOI material technology using plasma immersion ion implantation

被引：3

作者：

Lu, X ^{[1
]}

Iyer, SSK ^{[1
]}

Min, J ^{[1
]}

Fan, Z ^{[1
]}

Liu, JB ^{[1
]}

Chu, PK ^{[1
]}

Hu, C ^{[1
]}

Chueng, NW ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,PLASMA ASSISTED MAT PROC LAB,BERKELEY,CA 94720

来源：

1996 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS | 1996年

关键词：

D O I：

10.1109/SOI.1996.552487

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：48 / 49

页数：2

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