Nitride stress inversion using plasma immersion ion implantation processes

被引：0

作者：

Lachal, L. ^{[1
]}

Plantier, C. ^{[1
]}

Torregrosa, F. ^{[2
]}

Aubert, C. ^{[2
]}

Pedini, J. M. ^{[1
]}

Borvon, G. ^{[2
]}

Coig, M. ^{[1
]}

Milesi, F. ^{[1
]}

Mazen, F. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France

[2] Ion Beam Serv, ZI Rousset,Rue G Imbert Prolongee, F-13790 Peynier, France

来源：

MRS ADVANCES | 2022年 / 7卷 / 36期

关键词：

ORIGIN; FILMS;

D O I：

10.1557/s43580-022-00468-z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Three different species (nitrogen, xenon and argon) were evaluated to change the stress of a tensile PECVD nitride film by plasma immersion ion implantation. The nitride layer integrity was maintained for all PIII processes save for the highest dose and energy for xenon. However, a variation of the Refractive Index with increasing dose was observed, indicating some stress evolution in the nitride layer. Argon was as efficient to change the nitride stress as nitrogen, both species modifying the nitride stress from initially tensile into compressive.

引用

页码：1390 / 1394

页数：5

共 50 条

[1] Nitride stress inversion using plasma immersion ion implantation processes
L. Lachal
C. Plantier
F. Torregrosa
C. Aubert
J. M. Pedini
G. Borvon
M. Coig
F. Milesi
F. Mazen
MRS Advances, 2022, 7 : 1390 - 1394
[2] Minimisation of intrinsic stress in titanium nitride using a cathodic arc with plasma immersion ion implantation
Lim, SHN
McCulloch, DG
Bilek, MMM
McKenzie, DR
SURFACE & COATINGS TECHNOLOGY, 2003, 174 : 76 - 80
[3] Stress relief and texture formation in aluminium nitride by plasma immersion ion implantation
Gan, BK
Bilek, MMM
McKenzie, DR
Shi, Y
Tompsett, DA
Taylor, MB
McCulloch, DG
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (10) : 1751 - 1760
[4] Relation between microstructure and stress in titanium nitride films grown by plasma immersion ion implantation
Lim, S.H.N. (sunnie.lim@rmit.edu.au), 1600, American Institute of Physics Inc. (93):
[5] Relation between microstructure and stress in titanium nitride films grown by plasma immersion ion implantation
Lim, SHN
McCulloch, DG
Bilek, MMM
McKenzie, DR
JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) : 4283 - 4288
[6] Electrical characterization of silicon nitride produced by plasma immersion ion implantation
Chen, SM
Shannon, JM
Gwilliam, RM
Sealy, BJ
SURFACE & COATINGS TECHNOLOGY, 1997, 93 (2-3): : 269 - 273
[7] Growth of the carbide, nitride and oxide of silicon by plasma immersion ion implantation
Volz, K
Ensinger, W
SURFACE & COATINGS TECHNOLOGY, 2002, 156 (1-3): : 237 - 243
[8] Ion implantation by plasma immersion
Thomae, R
Bender, H
Halder, J
Hilschert, F
Klein, H
Schafer, J
Seiler, B
ION IMPLANTATION TECHNOLOGY - 96, 1997, : 757 - 759
[9] Plasma immersion ion implantation
Xia, Lifang
Sun, Yue
Ma, Xinxin
Lizi Jiaohuan Yu Xifu/Ion Exchange and Adsorption, 1995, 11 (01): : 3 - 6
[10] Microcavity engineering using plasma immersion ion implantation
Chu, PK
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 83 - 86

← 1 2 3 4 5 →