Nitride stress inversion using plasma immersion ion implantation processes

被引：0

作者：

Lachal, L. ^{[1
]}

Plantier, C. ^{[1
]}

Torregrosa, F. ^{[2
]}

Aubert, C. ^{[2
]}

Pedini, J. M. ^{[1
]}

Borvon, G. ^{[2
]}

Coig, M. ^{[1
]}

Milesi, F. ^{[1
]}

Mazen, F. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France

[2] Ion Beam Serv, ZI Rousset,Rue G Imbert Prolongee, F-13790 Peynier, France

来源：

MRS ADVANCES | 2022年 / 7卷 / 36期

关键词：

ORIGIN; FILMS;

D O I：

10.1557/s43580-022-00468-z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Three different species (nitrogen, xenon and argon) were evaluated to change the stress of a tensile PECVD nitride film by plasma immersion ion implantation. The nitride layer integrity was maintained for all PIII processes save for the highest dose and energy for xenon. However, a variation of the Refractive Index with increasing dose was observed, indicating some stress evolution in the nitride layer. Argon was as efficient to change the nitride stress as nitrogen, both species modifying the nitride stress from initially tensile into compressive.

引用

页码：1390 / 1394

页数：5

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