Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

被引：213
|
作者：
Zhu, Xiaojian [3 ,4 ]
Su, Wenjing [3 ,4 ]
Liu, Yiwei [3 ,4 ]
Hu, Benlin [3 ,4 ]
Pan, Liang [3 ,4 ]
Lu, Wei [1 ]
Zhang, Jiandi [2 ]
Li, Run-Wei [3 ,4 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[2] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA
[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn NIMTE, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
[4] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn NIMTE, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China
来源：
ADVANCED MATERIALS | 2012年 / 24卷 / 29期
基金：
浙江省自然科学基金; 美国国家科学基金会; 中国国家自然科学基金;
关键词：
RESISTANCE; ROOM;
D O I：
10.1002/adma.201201506
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：3941 / 3946
页数：6
相关论文
共 50 条
  • [41] A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors
    Chen, B.
    Gao, B.
    Sheng, S. W.
    Liu, L. F.
    Liu, X. Y.
    Chen, Y. S.
    Wang, Y.
    Han, R. Q.
    Yu, B.
    Kang, J. F.
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (03) : 282 - 284
  • [42] Radiation Testing of Tantalum Oxide-based Resistive Memory
    Holt, Joshua
    Cady, Nathaniel
    Yang-Scharlotta, Jean
    2015 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2015, : 155 - 158
  • [43] Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing
    Moazzeni, Alireza
    Madvar, Hadi Riyahi
    Hamedi, Samaneh
    Kordrostami, Zoheir
    ACS APPLIED NANO MATERIALS, 2023, 6 (03) : 2236 - 2248
  • [44] HRS Instability in Oxide-Based Bipolar Resistive Switching Cells
    Wiefels, Stefan
    Bengel, Christopher
    Kopperberg, Nils
    Zhang, Kaihua
    Waser, Rainer
    Menzel, Stephan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (10) : 4208 - 4215
  • [45] Tuning the resistive switching in tantalum oxide-based memristors by annealing
    Li, Yang
    Suyolcu, Y. Eren
    Sanna, Simone
    Christensen, Dennis Valbjorn
    Traulsen, Marie Lund
    Stamate, Eugen
    Pedersen, Christian Sondergaard
    van Aken, Peter A.
    Garcia Lastra, Juan Maria
    Esposito, Vincenzo
    Pryds, Nini
    AIP ADVANCES, 2020, 10 (06)
  • [46] Conductance quantization in a Ag filament-based polymer resistive memory
    Gao, Shuang
    Zeng, Fei
    Chen, Chao
    Tang, Guangsheng
    Lin, Yisong
    Zheng, Zifeng
    Song, Cheng
    Pan, Feng
    NANOTECHNOLOGY, 2013, 24 (33)
  • [47] Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory
    Qian, Kai
    Cai, Guofa
    Viet Cuong Nguyen
    Chen, Tupei
    Lee, Pooi See
    ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (41) : 27885 - 27891
  • [48] Conductance fluctuation in NiO-based resistive switching memory
    Nishi, Yusuke
    Sasakura, Hiroki
    Kimoto, Tsunenobu
    JOURNAL OF APPLIED PHYSICS, 2018, 124 (15)
  • [49] A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect
    Gao, Bin
    Kang, Jinfeng
    Liu, Lifeng
    Liu, Xiaoyan
    Yu, Bin
    APPLIED PHYSICS LETTERS, 2011, 98 (23)
  • [50] Au Nanocrystals Modulate Resistive Switching and Magnetic Properties of Spinel Cobalt Oxide-Based Memory Devices
    Yao, Chuangye
    Bao, Dinghua
    ACS APPLIED NANO MATERIALS, 2023, 7 (01) : 509 - 517
12345