Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

被引：213
|
作者：
Zhu, Xiaojian [3 ,4 ]
Su, Wenjing [3 ,4 ]
Liu, Yiwei [3 ,4 ]
Hu, Benlin [3 ,4 ]
Pan, Liang [3 ,4 ]
Lu, Wei [1 ]
Zhang, Jiandi [2 ]
Li, Run-Wei [3 ,4 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[2] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA
[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn NIMTE, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
[4] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn NIMTE, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China
来源：
ADVANCED MATERIALS | 2012年 / 24卷 / 29期
基金：
浙江省自然科学基金; 美国国家科学基金会; 中国国家自然科学基金;
关键词：
RESISTANCE; ROOM;
D O I：
10.1002/adma.201201506
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：3941 / 3946
页数：6
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