A Virtual Prototyping System for Silicon-Carbide Power Modules

被引：0

作者：

Neumaier, Klaus ^{[1
]}

Valenta, Vaclav ^{[2
]}

Chut, Jonathan ^{[3
]}

Xiao, Yunpeng ^{[4
]}

Benczkowski, Stan ^{[5
,6
]}

Marquis, Bob

Yadav, Sameer ^{[1
]}

Harper, Jonathan ^{[1
]}

Pichatt, Ondrej ^{[7
]}

Thirukoluri, Rajani ^{[1
]}

Paul, Roveendra ^{[9
]}

Zhang, Leon ^{[10
]}

Bidzishvili, Levan ^{[1
]}

Bordignon, Thierry ^{[8
]}

Victory, James ^{[9
]}

机构：

[1] Onsemi, Aschheim, Germany

[2] Onsemi, Brno, Czech Republic

[3] Onsemi, Hong Kong, Peoples R China

[4] Onsemi, Shanghai, Peoples R China

[5] Onsemi, Mt Top, PA USA

[6] Onsemi, East Greenwich, RI USA

[7] Onsemi, Roznov, Czech Republic

[8] Onsemi, Toulouse, France

[9] Onsemi, Sunnyvale, CA USA

[10] Onsemi, Phoenix, AZ USA

来源：

2023 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC | 2023年

关键词：

Silicon-Carbide (SIC) power module simulation; parasitics; thermal impedance; power module SPICE model;

D O I：

10.1109/APEC43580.2023.10131595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a holistic design and simulation tool deployed for virtual prototyping of SiC power modules. The power module designer proceeds from concept to virtual prototype in a logical and comprehensive flow. Starting with a simple 2D DXF of the Direct Bond Copper (DBC), the module is designed through die selection and placement, layer and material property declaration, electrical connectivity, and external port definition. Automated 3D model generation is carried out through advanced Ansys scripting techniques. Multiple levels of simulation and model generation are executed through Ansys Icepak, Ansys Q3D, and SPICE. The tool has been validated on multiple onsemi SiC industrial and automotive traction power modules.

引用

页码：2676 / 2683

页数：8

共 50 条

[31] JOINING OF SILICON-CARBIDE
MOROZUMI, S
JOURNAL OF NUCLEAR MATERIALS, 1989, 169 : 270 - 272
[32] ELECTRODEPOSITION OF SILICON-CARBIDE
ELWELL, D
FEIGELSON, RS
SIMKINS, MM
MATERIALS RESEARCH BULLETIN, 1982, 17 (06) : 697 - 706
[33] CATHODOLUMINESCENCE OF SILICON-CARBIDE
SODOMKA, L
CZECHOSLOVAK JOURNAL OF PHYSICS, 1978, 28 (02) : 233 - 236
[34] EROSION OF SILICON-CARBIDE
ROUTBORT, JL
SCATTERGOOD, RO
TURNER, APL
JOURNAL OF METALS, 1979, 31 (08): : F8 - F8
[35] DINISTOR ON SILICON-CARBIDE
VAINSHTEIN, SN
DMITRIEV, VA
SYRKIN, AL
CHELNOKOV, VE
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 13 (16): : 991 - 993
[36] OXIDATION OF SILICON-CARBIDE
KEYS, LH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C253 - C253
[37] Optimized Power Modules for Silicon Carbide MOSFET
Regnat, Guillaume
Jeannin, Pierre-Olivier
Ewanchuk, Jeffrey
Frey, David
Mollov, Stefan
Ferrieux, Jean-Paul
2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2016,
[38] Optimized Power Modules for Silicon Carbide MOSFET
Regnat, Guillaume
Jeannin, Pierre-Olivier
Frey, David
Ewanchuk, Jeffrey
Mollov, Stefan V.
Ferrieux, Jean-Paul
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2018, 54 (02) : 1634 - 1644
[39] UTILIZATION OF SILICON-CARBIDE
MOSER, M
PALL, A
PAPP, K
KEMIAI KOZLEMENYEK, 1975, 44 (1-2): : 165 - 187
[40] THERMAL-EXPANSION OF SILICON-CARBIDE MONOFILAMENTS AND SILICON-CARBIDE BOROSILICATE COMPOSITES
ELKIND, A
BARSOUM, M
KANGUTKAR, P
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (10) : 2871 - 2873

← 1 2 3 4 5 →