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THERMAL-EXPANSION OF SILICON-CARBIDE MONOFILAMENTS AND SILICON-CARBIDE BOROSILICATE COMPOSITES
被引:20
|作者:
ELKIND, A
BARSOUM, M
KANGUTKAR, P
机构:
[1] Materials Engineering Department, Drexel University, Philadelphia, Pennsylvania
关键词:
D O I:
10.1111/j.1151-2916.1992.tb05520.x
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
The coefficient of thermal expansion (CTE) of a 140-mum-diameter SiC monofilament was determined to be 6.5 +/- 0.5 x 10(-6)-degrees-C-1 in the temperature range 25-degrees-900-degrees-C. Heat treatment of the fibers at 1400-degrees-C for 90 min resulted in both an increase in the intensities of the SiC peaks and a reduction of their width, indicating some grain growth. Furthermore, heat treatment of the fibers for 2 h at 1600-degrees-C in vacuum reduced their CTE to 5.7 x 10(-6)-degrees-C-1. The anomalously high CTE and its decrease upon heat treatment were attributed to the presence of a large fraction of the atoms in the boundaries between the nanometer beta-SiC grains. The thermal expansion coefficients of a series of SiC/borosilicate composites were measured as a function of fiber volume fraction in the temperature range 25-degrees-500-degrees-C and found to follow the rule of mixtures.
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页码:2871 / 2873
页数:3
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