Thermal cycling characterization of integrated GaN power module

被引：0
|
作者：
Sun, Zhongchao [1 ]
Takahashi, Masaki [1 ]
Munk-Nielsen, Stig [1 ]
Jorgensen, Asger Bjorn [1 ]
机构：
[1] AAU Energy, Pontoppidanstr 101, Aalborg, Denmark
来源：
2023 25TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, EPE'23 ECCE EUROPE | 2023年
关键词：
Degradation; Failure modes; Gallium Nitride (GaN); Packaging; Thermal cycling;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A thermal cycling test is developed on a low parasitic inductance integrated GaN power module by monitoring the electrical and thermal parameters. The failure points of DBC and solder attach leading to increased thermal resistance are located, and the failure mechanism is analyzed based on Scanning Acoustic Microscope observation.
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收藏
页数：7
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