A Simulation of Intelligent Power Module Under Power Cycling Condition

被引：0
|
作者：
Wang, Yong [1 ]
Zhao, Wen [1 ]
Li, Ming [1 ]
Chen, Ming [2 ]
Gao, Liming [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200030, Peoples R China
[2] Shanghai Belling Corp Ltd, Power Device Grp, Shanghai, Peoples R China
来源：
2014 15TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2014年
关键词：
IPM; Power cycling; FEA;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
this paper focuses on the performance of IPM (Intelligent Power Module) under power cycling test which is simulated by a FEA (Finite Element Analysis) method. Through the method of control variables some properties can be obtained. The key parameters in the calculation include power dissipation of silicon chip, cycle period, different materials of ceramic substrate and solder layer thickness. A series of factors are adopted in the simulation to evaluate the influence of power cycling test on IPM. The disciplinary conclusion can be a suggestion for package design.
引用
收藏
页码：1015 / 1020
页数：6
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