Thermal cycling characterization of integrated GaN power module

被引：0
|
作者：
Sun, Zhongchao [1 ]
Takahashi, Masaki [1 ]
Munk-Nielsen, Stig [1 ]
Jorgensen, Asger Bjorn [1 ]
机构：
[1] AAU Energy, Pontoppidanstr 101, Aalborg, Denmark
来源：
2023 25TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, EPE'23 ECCE EUROPE | 2023年
关键词：
Degradation; Failure modes; Gallium Nitride (GaN); Packaging; Thermal cycling;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A thermal cycling test is developed on a low parasitic inductance integrated GaN power module by monitoring the electrical and thermal parameters. The failure points of DBC and solder attach leading to increased thermal resistance are located, and the failure mechanism is analyzed based on Scanning Acoustic Microscope observation.
引用
收藏
页数：7
相关论文
共 50 条
  • [41] Thermal Performance Optimization of Integrated Microchannel Cooling Plate for IGBT Power Module
    Xu, Hanyang
    Huang, Jiabo
    Tian, Wenchao
    Li, Zhao
    MICROMACHINES, 2023, 14 (08)
  • [42] Review of Power Cycling Reliability of GaN HEMTs
    Wang, Zhizhe
    Wang, Bin
    Deng, Chuanjin
    Deng, Rui
    Chen, Si
    Ren, Yan
    Ma, Chi
    2022 23RD INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, ICEPT, 2022,
  • [43] Thermal Characterization of an IGBT Power Module with On-Die Temperature Sensors
    Bidouche, Badr-El-Boudour
    Avenas, Yvan
    Essakili, Mouslim
    Dupont, Laurent
    2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2017, : 2317 - 2322
  • [44] Power amplifier module with integrated power control
    2001, Elsevier Ltd (14)
  • [45] Thermal Cycling and Fatigue Life Analysis of a Laterally Conducting GaN-based Power Package
    Zaghari, Pouria
    Sinha, Sourish S.
    Ryu, Jong Eun
    Franzon, Paul D.
    Hopkins, Douglas C.
    2023 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE, 3DIC, 2023,
  • [46] Characterization and Modeling of Dynamic Thermal Coupling in GaN MMIC Power Amplifiers
    Kristensen, Tobias
    Nilsson, Torbjorn M. J.
    Divinyi, Andreas
    Bremer, Johan
    Thorsell, Mattias
    2024 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, IMS 2024, 2024, : 1053 - 1056
  • [47] Pulse characterization of trapping and thermal effects of microwave GaN power FETs
    Augaudy, S
    Quéré, R
    Teyssier, JP
    Di Forte-Poisson, MA
    Cassette, S
    Dessertenne, B
    Delage, SL
    2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2001, : 427 - 430
  • [48] Thermal characteristics of Integrated Module Board
    Karila, Tanja
    Palm, Petted
    TWENTY FOURTH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM, PROCEEDINGS 2008, 2008, : 84 - 90
  • [49] POWER CYCLING AND STRESS VARIATION IN A MULTICHIP-MODULE
    SUR, B
    TURLIK, I
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART B-ADVANCED PACKAGING, 1995, 18 (02): : 388 - 395
  • [50] Characteristics of 3D-Integrated GaN Power Module Under Multi Heat Source Coupling
    Shi, Yijun
    Lv, Mingen
    Lu, Guoguang
    Hui, Caixing
    He, Liang
    Chen, Xinghuan
    Chen, Yuan
    Lu, Xiangjun
    MATERIALS, 2025, 18 (05)
12345