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- [46] First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories 2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM, 2022,
- [48] Critical Current Reduction of Field-Free Perpendicular SOT-MTJ by STT Assist Using Micromagnetic Simulation 2021 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2021), 2021, : 159 - 162