Field-Free SOT-Switching Based on a Vertical Composition Gradient of Ferrimagnetic Alloys

被引:11
|
作者
Zeng, Guang [1 ]
Wen, Yao [2 ]
Wu, Chuangwen [1 ]
Ren, Chuantong [1 ]
Meng, Dequan [1 ]
Zhang, Jing [3 ]
Li, Wendi [4 ]
Wang, Hao [2 ]
Luo, Wei [5 ]
Zhang, Yue [5 ]
Dong, Kaifeng [4 ]
Wu, Hao [3 ]
Liang, Shiheng [1 ]
机构
[1] Hubei Univ, Fac Phys & Elect Sci, Wuhan 430062, Peoples R China
[2] Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China
[3] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
[4] China Univ Geosci, Sch Automat, Wuhan 430074, Peoples R China
[5] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
spin-orbit torque; composition gradient; magnetic field; field-free SOT switching; neuralnetworks; magnetization switching; SPIN-ORBIT-TORQUE; PERPENDICULAR MAGNETIZATION;
D O I
10.1021/acsaelm.3c00429
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Reproducible field-free spin-orbit torque (SOT)-drivenperpendicularmagnetization switching is essential for the development of ultralow-powerspintronic devices. However, the perpendicular magnetization of bulk-symmetricmonolayer ferromagnetic films cannot be switched directly by the current-inducedSOT. An additional auxiliary in-plane magnetic field is required torealize deterministic switching, which is unfavorable for device applications.Here, we break the bulk-center symmetry of CoTb alloy films by introducinga vertical composition gradient of heavy metal Pt, and we thus achievethe field-free SOT switching. The experimental results also show thatthe vertical composition gradient of Pt in the magnetic layer inducesan out-of-plane effective field, and the magnitude of this effectivefield is proportional to the Pt vertical composition gradient. Thedata also revealed the presence of the multilevel resistance state,which is consistent with the requirements of artificially intelligentneuro-synapses. This field-free multilevel resistive state providesa way for the design of resistive elements of neural network structures.
引用
收藏
页码:4168 / 4173
页数:6
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