Field-Free SOT-Switching Based on a Vertical Composition Gradient of Ferrimagnetic Alloys

被引:11
|
作者
Zeng, Guang [1 ]
Wen, Yao [2 ]
Wu, Chuangwen [1 ]
Ren, Chuantong [1 ]
Meng, Dequan [1 ]
Zhang, Jing [3 ]
Li, Wendi [4 ]
Wang, Hao [2 ]
Luo, Wei [5 ]
Zhang, Yue [5 ]
Dong, Kaifeng [4 ]
Wu, Hao [3 ]
Liang, Shiheng [1 ]
机构
[1] Hubei Univ, Fac Phys & Elect Sci, Wuhan 430062, Peoples R China
[2] Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China
[3] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
[4] China Univ Geosci, Sch Automat, Wuhan 430074, Peoples R China
[5] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
spin-orbit torque; composition gradient; magnetic field; field-free SOT switching; neuralnetworks; magnetization switching; SPIN-ORBIT-TORQUE; PERPENDICULAR MAGNETIZATION;
D O I
10.1021/acsaelm.3c00429
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Reproducible field-free spin-orbit torque (SOT)-drivenperpendicularmagnetization switching is essential for the development of ultralow-powerspintronic devices. However, the perpendicular magnetization of bulk-symmetricmonolayer ferromagnetic films cannot be switched directly by the current-inducedSOT. An additional auxiliary in-plane magnetic field is required torealize deterministic switching, which is unfavorable for device applications.Here, we break the bulk-center symmetry of CoTb alloy films by introducinga vertical composition gradient of heavy metal Pt, and we thus achievethe field-free SOT switching. The experimental results also show thatthe vertical composition gradient of Pt in the magnetic layer inducesan out-of-plane effective field, and the magnitude of this effectivefield is proportional to the Pt vertical composition gradient. Thedata also revealed the presence of the multilevel resistance state,which is consistent with the requirements of artificially intelligentneuro-synapses. This field-free multilevel resistive state providesa way for the design of resistive elements of neural network structures.
引用
收藏
页码:4168 / 4173
页数:6
相关论文
共 50 条
  • [11] Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect
    Pruckner, B.
    Jørstad, N.
    Hádamek, T.
    Goes, W.
    Selberherr, S.
    Sverdlov, V.
    2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings, 2024, : 1584 - 1589
  • [12] Field-Free Switching of Spin Crossbar Arrays by Asymmetric Spin Current Gradient
    Deng, Yongcheng
    Li, Weihao
    Lan, Xiukai
    Zhang, Enze
    Li, Runze
    Shang, Yaxuan
    Liu, Shuai
    Li, Baohe
    Liu, Xionghua
    Zheng, Houzhi
    Wang, Kaiyou
    ADVANCED FUNCTIONAL MATERIALS, 2024, 34 (01)
  • [13] Theoretical Study of Field-Free Switching in PMA-MTJ Using Combined Injection of STT and SOT Currents
    Wasef, Shaik
    Fariborzi, Hossein
    MICROMACHINES, 2021, 12 (11)
  • [14] Thermally Robust Perpendicular SOT-MTJ Memory Cells With STT-Assisted Field-Free Switching
    Tsou, Ya-Jui
    Chen, Wei-Jen
    Shih, Huan-Chi
    Liu, Pang-Chun
    Liu, C. W.
    Li, Kai-Shin
    Shieh, Jia-Min
    Yen, Yu-Shen
    Lai, Chih-Huang
    Wei, Jeng-Hua
    Tang, Denny D.
    Sun, Jack Yuan-Chen
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (12) : 6623 - 6628
  • [15] Two-pulse magnetic field-free switching scheme for perpendicular SOT-MRAM with a symmetric square free layer
    de Orio, R. L.
    Makarov, A.
    Goes, W.
    Ender, J.
    Fiorentini, S.
    Sverdlov, V
    PHYSICA B-CONDENSED MATTER, 2020, 578
  • [16] Field-Free Switching and Enhanced Electrical Detection of Ferrimagnetic Insulators Through an Intermediate Ultrathin Ferromagnetic Metal Layer
    Ke, Jintao
    Bi, Linzhu
    Zhu, Zhaozhao
    Bai, He
    Li, Guansong
    Hu, Chaoqun
    Wang, Pengju
    Zhang, Ying
    Cai, Jian-Wang
    ADVANCED MATERIALS INTERFACES, 2023, 10 (36)
  • [17] Tunable multistate field-free switching and ratchet effect by spin-orbit torque in canted ferrimagnetic alloy
    Hsu, Cheng-Hsiang
    Gross, Miela J.
    Kleidermacher, Hannah Calzi
    Sayed, Shehrin
    Salahuddin, Sayeef
    NATURE COMMUNICATIONS, 2024, 15 (01)
  • [18] Field-Free Magnetization Switching by an Acoustic Wave
    Camara, Ls
    Duquesne, J-Y
    Lemaitre, A.
    Gourdon, C.
    Thevenard, L.
    PHYSICAL REVIEW APPLIED, 2019, 11 (01)
  • [19] Field-Free Spin-Orbit Torque Switching in Synthetic Ferro and Antiferromagents with Exchange Field Gradient
    Fan, Haodong
    Jin, Menghao
    Luo, Yongming
    Yang, Hongxin
    Wu, Birui
    Feng, Zhongshu
    Zhuang, Yanshan
    Shao, Ziji
    Yu, Changqiu
    Li, Hai
    Wen, Jiahong
    Wang, Ningning
    Liu, Bo
    Li, Wenjun
    Zhou, Tiejun
    ADVANCED FUNCTIONAL MATERIALS, 2023, 33 (16)
  • [20] Field-Free Spin-Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source
    Meng, Dequan
    Chen, Shiwei
    Ren, Chuantong
    Li, Jiaxu
    Lan, Guibin
    Li, Chaozhong
    Liu, Yong
    Su, Yurong
    Yu, Guoqiang
    Chai, Guozhi
    Xiong, Rui
    Zhao, Weisheng
    Yang, Guang
    Liang, Shiheng
    ADVANCED ELECTRONIC MATERIALS, 2024, 10 (04)