Low-power and area-efficient memristor based non-volatile D latch and flip-flop: Design and analysis

被引:1
|
作者
S., Haroon Rasheed [1 ]
Nelapati, Rajeev Pankaj [1 ]
机构
[1] Vellore Inst Technol, Sch Elect Engn, Vellore, Tamil Nadu, India
来源
PLOS ONE | 2024年 / 19卷 / 03期
关键词
HIGH-PERFORMANCE;
D O I
10.1371/journal.pone.0300073
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
In recent years, non-volatile memory elements have become highly appealing for memory applications to implement a new class of storage memory that could replace flash memories in sequential logic applications, with features such as compactness, low power, fast processing speed, high endurance, and retention. The memristor is one such non-volatile element that fits the fundamental blocks of sequential logic circuits, the latch and flip-flop; hence, in this article, a non-volatile latch architecture using memristor ratioed logic (MRL) inverter and CMOS components is focused, with an additional memristor as a memory element. A Verilog-A model was used to create the memristor element. The simulation findings validated the compact, low-voltage, and reliable design of the latch design. We evolved in technology enough to create a master-slave flip-flop and arrange it to function as a counter and a shift register. Power, number of elements, cell size, energy, programming time, and robustness are compared to comparable non-volatile topologies. The proposed non-volatile latch proves non-volatility and can store data with a 24% reduction in power consumption and a near 10% reduction in area.
引用
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页数:17
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