Effects of Oxide Species on the Reduction of Contact Resistivity of Al/oxide/n-GaN MIS Devices

被引：0

作者：

Koba, Jiro ^{[1
,2
]}

Koike, Junichi ^{[1
]}

机构：

[1] Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808572, Japan

[2] JX Nippon Min & Met Corp, Tokyo 1058417, Japan

来源：

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年

关键词：

GaN; MIS contact; MIGS;

D O I：

10.1109/EDTM55494.2023.10102978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated metal-insulator-semiconductor (MIS) contact using GaOx, TiOx, and ZnOx on nGaN having Si doping concentration of 2 x 10(18) cm(-3). While we obtained the low specific contact resistivity (rho c) of 7.1 x 10(-7) Omega center dot cm(2) with GaOx and 7.7 x 10(-5) Omega center dot cm(2) with TiOx, rho c increased with ZnOx. We further evaluated the band alignment of oxide/GaN and discussed the variation of the Schottky barrier height (SBH) based on the metalinduced gap states (MIGS) model to validate our results.

引用

页数：3

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