Effects of Oxide Species on the Reduction of Contact Resistivity of Al/oxide/n-GaN MIS Devices

被引：0
|
作者：
Koba, Jiro [1 ,2 ]
Koike, Junichi [1 ]
机构：
[1] Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808572, Japan
[2] JX Nippon Min & Met Corp, Tokyo 1058417, Japan
来源：
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年
关键词：
GaN; MIS contact; MIGS;
D O I：
10.1109/EDTM55494.2023.10102978
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated metal-insulator-semiconductor (MIS) contact using GaOx, TiOx, and ZnOx on nGaN having Si doping concentration of 2 x 10(18) cm(-3). While we obtained the low specific contact resistivity (rho c) of 7.1 x 10(-7) Omega center dot cm(2) with GaOx and 7.7 x 10(-5) Omega center dot cm(2) with TiOx, rho c increased with ZnOx. We further evaluated the band alignment of oxide/GaN and discussed the variation of the Schottky barrier height (SBH) based on the metalinduced gap states (MIGS) model to validate our results.
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页数：3
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