Temperature-induced Instability of Retention Characteristics in 3-D NAND Flash Memory

被引：0
|
作者：
An, Ukju [1 ]
Yoon, Gilsang [1 ]
Go, Donghyun [1 ]
Park, Jounghun [1 ]
Kim, Donghwi [1 ]
Kim, Jongwoo [1 ]
Lee, Jeong-Soo [1 ]
机构：
[1] Pohang Univ Sci & Technol, Pohang 37673, South Korea
来源：
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年
关键词：
3-D NAND flash; program temperature; read temperature; retention characteristics;
D O I：
10.1109/JCS57290.2023.10102959
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A temperature-induced instability of retention characteristics is observed in 3-D NAND flash. The effect of grain boundary (GB) is newly considered to investigate the retention characteristics at different program temperature ( T-PGM) and read temperature (T-READ). At high TPGM, the decrease of threshold voltage (V-T) is reduced. As the difference between T-PGM and T-READ increases, V-T change after 4 h varies linearly from negative to positive value due to the increase of the GB effect.
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页数：3
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