An Abnormal Negative Temperature Dependence of Erase-State Vt Retention Shift in 3-D NAND Flash Memories

被引：0
|
作者：
Liu, Y. H. [1 ]
Yang, Y. S. [1 ]
Zhan, T. C. [1 ]
Lin, W. [1 ]
Liu, A. C. [1 ]
Hsu, Y. C. [1 ]
Hu, M. [2 ]
Liu, Z. J. [2 ]
机构：
[1] Phison Elect Corp, Miaoli, Taiwan
[2] Guangdong OPPO Mobile Telecommun Corp Ltd, Dongguan, Guangdong, Peoples R China
来源：
2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2022年
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T [工业技术];
学科分类号：
08 ;
摘要：
P30
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页数：1
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