Temperature-induced Instability of Retention Characteristics in 3-D NAND Flash Memory

被引：0

作者：

An, Ukju ^{[1
]}

Yoon, Gilsang ^{[1
]}

Go, Donghyun ^{[1
]}

Park, Jounghun ^{[1
]}

Kim, Donghwi ^{[1
]}

Kim, Jongwoo ^{[1
]}

Lee, Jeong-Soo ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Pohang 37673, South Korea

来源：

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年

关键词：

3-D NAND flash; program temperature; read temperature; retention characteristics;

D O I：

10.1109/JCS57290.2023.10102959

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A temperature-induced instability of retention characteristics is observed in 3-D NAND flash. The effect of grain boundary (GB) is newly considered to investigate the retention characteristics at different program temperature ( T-PGM) and read temperature (T-READ). At high TPGM, the decrease of threshold voltage (V-T) is reduced. As the difference between T-PGM and T-READ increases, V-T change after 4 h varies linearly from negative to positive value due to the increase of the GB effect.

引用

页数：3

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