An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model

被引：3
|
作者：
Singhal, Anant [1 ]
Gill, Garima [1 ]
Pahwa, Girish [2 ]
Hu, Chenming [2 ]
Agarwal, Harshit [1 ]
机构：
[1] Indian Inst Technol Jodhpur, Nano Devices & App Lab, Jodhpur, Rajasthan, India
[2] Univ Calif Berkeley, Berkeley, CA 94720 USA
来源：
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年
关键词：
BSIM-BULK; Gummel Symmetry test; Harmonic Balance test; LDMOS; MOSFET MODEL; DEVICES; PSP;
D O I：
10.1109/EDTM55494.2023.10103122
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Symmetry, continuity, differentiability, accuracy and efficiency are the essential requirements of a compact model. To ensure this need, in this work, we implement two major updates in drift resistance model in BSIM-High Voltage (HV) compact model. The updated model is faster while ensuring infinite continuity and differentiability around V-ds = 0V, leading to correct slope of harmonics. The model is validated with the numerical simulated and experimental data of HV transistors.
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收藏
页数：3
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