Atomic Level to Device Level Simulation of Transistor's Reliability

被引：0
|
作者：
Liu, Yue-Yang [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing, Peoples R China
来源：
2024 INTERNATIONAL SYMPOSIUM OF ELECTRONICS DESIGN AUTOMATION, ISEDA 2024 | 2024年
关键词：
reliability; first-principles calculation; multiscale simulation;
D O I：
10.1109/ISEDA62518.2024.10617621
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Reliability simulation and design is becoming more and more important with the shrinking of device size and advancing of device architecture. However, the traditional simulation tools are not catching up with the increasing demand on accuracy and universality, due to the strong reliance on empirical/fitted parameters and oversimplified/phenomenological models. It is highly anticipated to improve the traditional tools by integrating with atomistic simulations and by developing more accurate physical models for various reliability issues.
引用
收藏
页码：42 / 43
页数：2
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