ELECTRICAL PROPERTIES OF INTERFACE-TRAPS IN SELECTIVELY DOPED AlGaAs/GaAs HETEROSTRUCTURES.

被引：0
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作者：
Takikawa, Masahiko [1 ]
机构：
[1] Fujitsu Lab Ltd, Atsugi, Jpn, Fujitsu Lab Ltd, Atsugi, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1987年 / 26卷 / 12期
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摘要：
SEMICONDUCTOR DEVICES
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页码：2026 / 2032
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