ELECTRON VELOCITY AT HIGH ELECTRON FIELDS IN AlGaAs/GaAs MODULATION-DOPED HETEROSTRUCTURES.

被引：0
|
作者：
Masselink, W.T. [1 ]
Braslau, N. [1 ]
LaTulipe, D. [1 ]
Wang, W.I. [1 ]
Wright, S.L. [1 ]
机构：
[1] IBM, Yorktown Heights, NY, USA, IBM, Yorktown Heights, NY, USA
来源：
Solid-State Electronics | 1987年 / 31卷 / 3-4期
关键词：
ELECTRON VELOCITY - HIGH ELECTRIC FIELDS - INTERVALLEY TRANSFER - MODULATION-DOPED HETEROSTRUCTURES - PEAK VELOCITY;
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摘要：
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页码：337 / 340
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