ELECTRICAL PROPERTIES OF INTERFACE-TRAPS IN SELECTIVELY DOPED AlGaAs/GaAs HETEROSTRUCTURES.

被引：0
|
作者：
Takikawa, Masahiko [1 ]
机构：
[1] Fujitsu Lab Ltd, Atsugi, Jpn, Fujitsu Lab Ltd, Atsugi, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1987年 / 26卷 / 12期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTOR DEVICES
引用
收藏
页码：2026 / 2032
相关论文
共 50 条
  • [21] ENERGY AND SPIN POLARIZATION ANALYSIS OF NEAR BAND GAP PHOTOEMISSION IN AlGaAs/GaAs HETEROSTRUCTURES.
    Ciccacci, F.
    Drouhin, H.-J.
    Hermann, C.
    Houdre, R.
    Lampel, G.
    Alexandre, F.
    Physica Scripta, 1988, 38 (03) : 458 - 461
  • [22] Improvement of Curie temperature in Mn selectively δ-doped GaAs/AlGaAs heterostructures by self-consistent analysis
    Shen, Ye
    Wang, Jiqing
    Xing, Huaizhong
    Yu, Jianguo
    Mao, Huibing
    Lv, Bin
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 313 (01) : 17 - 20
  • [23] INFLUENCE OF MBE GROWTH-CONDITIONS ON PERSISTENT PHOTOCONDUCTIVITY EFFECTS IN N-ALGAAS AND SELECTIVELY DOPED GAAS/ALGAAS HETEROSTRUCTURES
    ISHIKAWA, T
    KONDO, K
    HIYAMIZU, S
    SHIBATOMI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L408 - L410
  • [24] MICROWAVE IV CHARACTERISTICS AND HIGH-FREQUENCY CURRENT INSTABILITIES IN SELECTIVELY DOPED HETEROSTRUCTURES ALGAAS/GAAS
    BORISOV, VI
    DMITRIEV, SG
    LYUBCHENKO, VE
    MEDVEDEV, BK
    MOKEROV, VG
    ROGASHKOV, SA
    SPIRIDONOV, KI
    RADIOTEKHNIKA I ELEKTRONIKA, 1994, 39 (02): : 321 - 327
  • [25] DIMENSIONAL RESONANCE OF THE TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS/ALGAAS HETEROSTRUCTURES
    ALLEN, SJ
    STORMER, HL
    HWANG, JCM
    PHYSICAL REVIEW B, 1983, 28 (08) : 4875 - 4877
  • [26] OSCILLATIONS OF THE CYCLOTRON RESONANCE LINEWIDTH WITH LANDAU LEVEL FILLING FACTOR IN GaAs/AlGaAs HETEROSTRUCTURES.
    Englert, Th.
    Maan, J.C.
    Uihlen, Ch.
    Tsui, D.C.
    Gossard, A.C.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt II): : 631 - 633
  • [27] GROWTH AND TRANSPORT-PROPERTIES OF MODULATION-DOPED GAAS/ALGAAS HETEROSTRUCTURES
    ZHOU, JM
    HUANG, Y
    MENG, QH
    CHENG, WQ
    WU, YS
    LI, YK
    YANG, ZX
    CHINESE PHYSICS, 1986, 6 (04): : 887 - 891
  • [28] Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides
    Vasil'evskii, I. S.
    Galiev, G. B.
    Klimov, E. A.
    Mokerov, V. G.
    Shirokov, S. S.
    Imamov, R. M.
    Subbotin, I. A.
    SEMICONDUCTORS, 2008, 42 (09) : 1084 - 1091
  • [29] Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides
    I. S. Vasil’evskiĭ
    G. B. Galiev
    E. A. Klimov
    V. G. Mokerov
    S. S. Shirokov
    R. M. Imamov
    I. A. Subbotin
    Semiconductors, 2008, 42 : 1084 - 1091
  • [30] INTERACTION OF ELECTRONS WITH INTERFACE PHONONS IN GAAS/ALAS AND GAAS/ALGAAS HETEROSTRUCTURES
    LUGLI, P
    BORDONE, P
    MOLINARI, E
    RUCKER, H
    DEPAULA, AM
    MACIEL, AC
    RYAN, JF
    SHAYEGAN, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) : B116 - B119
12345