In situ x-ray topography measurement of the growth temperature dependence of the critical thickness of epitaxial InGaAs on GaAs

被引：0
|
作者：
Tanner, B.K. [1 ]
Parbrook, P.J. [2 ]
Whitehouse, C.R. [2 ]
Keir, A.M. [3 ]
Johnson, A.D. [3 ]
Jones, J. [3 ]
Wallis, D. [3 ]
Smith, L.M. [3 ]
Lunn, B. [4 ]
Hogg, J.H.C. [5 ]
机构：
[1] Department of Physics, University of Durham, South Road, Durham, DH1 3LE, United Kingdom
[2] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 4DU, United Kingdom
[3] DERA, St Andrews Road, Great Malvern, Worcs, WR14 3PS, United Kingdom
[4] School of Engineering, University of Hull, Cottingham Road, Hull HU6 7RX, United Kingdom
[5] Department of Physics, University of Hull, Cottingham Road, Hull HU6 7RX, United Kingdom
来源：
Journal of Physics D: Applied Physics | 2001年 / 34卷 / 10 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
16
引用
收藏
相关论文
共 50 条
  • [41] Defect analysis of SiC sublimation growth by the in-situ X-ray topography
    Kato, T
    Oyanagi, N
    Yamaguchi, H
    Nishizawa, S
    Arai, K
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 295 - 298
  • [42] In-situ observation of silicon carbide sublimation growth by X-ray topography
    Kato, T
    Oyanagi, N
    Yamaguchi, H
    Nishizawa, S
    Khan, MN
    Kitou, Y
    Arai, K
    JOURNAL OF CRYSTAL GROWTH, 2001, 222 (03) : 579 - 585
  • [43] In situ X-ray diffraction study of molecular-beam epitaxial growth of InAs/GaAs(001) quantum dots
    Takahasi, M.
    Mizuki, J.
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E2201 - E2206
  • [44] Synchrotron X-ray topography and electrical characterization of epitaxial GaAs p-i-n structures
    Kostamo, Pasi
    Lankinen, Aapo
    Tuomi, Turkka O.
    Saynatjoki, Antti
    Lipsanen, Harri
    Zhilyaev, Yuri
    Fedorov, Leonid
    Orlova, Tatiana
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2008, 591 (01): : 192 - 195
  • [45] The hard X-ray response of epitaxial GaAs detectors
    Owens, A
    Bazdaz, M
    Kraft, S
    Peacock, A
    Nenonen, S
    Andersson, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2000, 442 (1-3): : 360 - 363
  • [46] IN SITU 3D X-RAY RECIPROCAL SPACE MAPPING DURING LATTICE-MISMATCHED InGaAs/GaAs GROWTH
    Sasaki, T.
    Suzuki, H.
    Sai, A.
    Ohshita, Y.
    Yamaguchi, M.
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, : 695 - 698
  • [47] GaN barrier layer dependence of critical thickness in GaInN/GaN superlattice on GaN characterized by in situ X-ray diffraction
    Osumi, Junya
    Ishihara, Koji
    Yamamoto, Taiji
    Iwaya, Motoaki
    Takeuchi, Tetsuya
    Kamiyama, Satoshi
    Akasaki, Isamu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (05)
  • [48] Direct measurement of InGaAs/GaAs lattice relaxation by double-crystal X-ray diffraction
    Zhuang, Yan
    Wang, Yutian
    Ma, Wengquan
    Lin, Yaowang
    Zhou, Zengqi
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1997, 18 (07): : 508 - 512
  • [49] In situ synchrotron X-ray scattering studies on the temperature dependence of oriented β-crystal growth in isotactic polypropylene
    Quan, Lijun
    Zhang, Xiaodong
    Xia, Weilong
    Chen, Yanhui
    Gong, Lei
    Liu, Zhenguo
    Zhang, Qiuyu
    Zhong, Ganji
    Li, Zhongming
    Hsiao, Benjamin
    POLYMER TESTING, 2020, 90
  • [50] Critical thickness investigation of InxGa1-xAs/GaAs by x-ray measurements
    Tlaczala, M
    Kozlowski, J
    Radziewicz, D
    Korbutowicz, R
    HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97, 1998, 48 : 119 - 122
12345