In situ x-ray topography measurement of the growth temperature dependence of the critical thickness of epitaxial InGaAs on GaAs

被引：0
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作者：
Tanner, B.K. [1 ]
Parbrook, P.J. [2 ]
Whitehouse, C.R. [2 ]
Keir, A.M. [3 ]
Johnson, A.D. [3 ]
Jones, J. [3 ]
Wallis, D. [3 ]
Smith, L.M. [3 ]
Lunn, B. [4 ]
Hogg, J.H.C. [5 ]
机构：
[1] Department of Physics, University of Durham, South Road, Durham, DH1 3LE, United Kingdom
[2] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 4DU, United Kingdom
[3] DERA, St Andrews Road, Great Malvern, Worcs, WR14 3PS, United Kingdom
[4] School of Engineering, University of Hull, Cottingham Road, Hull HU6 7RX, United Kingdom
[5] Department of Physics, University of Hull, Cottingham Road, Hull HU6 7RX, United Kingdom
来源：
Journal of Physics D: Applied Physics | 2001年 / 34卷 / 10 A期
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