In situ x-ray topography measurement of the growth temperature dependence of the critical thickness of epitaxial InGaAs on GaAs

被引：0
|
作者：
Tanner, B.K. [1 ]
Parbrook, P.J. [2 ]
Whitehouse, C.R. [2 ]
Keir, A.M. [3 ]
Johnson, A.D. [3 ]
Jones, J. [3 ]
Wallis, D. [3 ]
Smith, L.M. [3 ]
Lunn, B. [4 ]
Hogg, J.H.C. [5 ]
机构：
[1] Department of Physics, University of Durham, South Road, Durham, DH1 3LE, United Kingdom
[2] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 4DU, United Kingdom
[3] DERA, St Andrews Road, Great Malvern, Worcs, WR14 3PS, United Kingdom
[4] School of Engineering, University of Hull, Cottingham Road, Hull HU6 7RX, United Kingdom
[5] Department of Physics, University of Hull, Cottingham Road, Hull HU6 7RX, United Kingdom
来源：
Journal of Physics D: Applied Physics | 2001年 / 34卷 / 10 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
16
引用
收藏
相关论文
共 50 条
  • [21] Structural properties of MnAs epitaxial films on GaAs:: an in situ x-ray study
    Jenichen, B
    Satapathy, DK
    Braun, W
    Kaganer, VM
    Daweritz, L
    Ploog, KH
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (10A) : A169 - A173
  • [22] Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-ray Topography
    Suzuki, Hidetoshi
    Sasaki, Takuo
    Yamamoto, Susumu
    Ohshita, Yoshio
    Fukuyama, Atsuhiko
    Yamaguchi, Masafumi
    DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV, 2012, 725 : 85 - +
  • [23] Heating rate dependence of melting of silicon:: An in situ x-ray topography study
    Wang, YR
    Kakimoto, K
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2247 - 2251
  • [24] In-situ X-ray topography on crystal growth of silicon carbide
    2001, Japan Welding Society (70):
  • [25] Modelization of epitaxial GaAs X-ray detectors
    Mañez, N
    Sun, GC
    Ben Choulkha, M
    Algani, C
    Alquié, G
    Verdeil, C
    Talbi, N
    Khirouni, K
    Bourgoin, JC
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (10) : 1498 - 1503
  • [26] Suitability of epitaxial GaAs for x-ray imaging
    Sun, GC
    Talbi, N
    Verdeil, C
    Bourgoin, JC
    APPLIED PHYSICS LETTERS, 2004, 85 (12) : 2399 - 2401
  • [27] In-situ X-ray diffraction during epitaxial growth of ZnSe-based heterostructures on (001)GaAs
    Benkert, Andreas
    Schumacher, Claus
    Neder, Reinhard B.
    Brunner, Karl
    Physica Status Solidi (C) Current Topics in Solid State Physics, 2007, 4 (09): : 3166 - 3182
  • [28] X-RAY DIFFRACTION INTENSITY RATIO METHOD FOR THE THICKNESS MEASUREMENT OF TERNARY, HETEROGENEOUS EPITAXIAL LAYERS ON A GaAs SUBSTRATE.
    Yang Chuanzheng
    1983, (04):
  • [29] Synchrotron X-ray topography study of defects in epitaxial GaAs on high-quality Ge
    Lankinen, A
    Knuuttila, L
    Tuomi, T
    Kostamo, P
    Säynätjoki, A
    Riikonen, J
    Lipsanen, H
    McNally, PJ
    Lu, X
    Sipilä, H
    Vaijärvi, S
    Lumb, D
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2006, 563 (01): : 62 - 65
  • [30] INVESTIGATION OF EPITAXIAL LATERAL OVERGROWTH BY X-RAY TOPOGRAPHY
    KOHLER, R
    JENICHEN, B
    BAUSER, E
    BERGMANN, R
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) : 405 - 409
12345