共 50 条
- [1] REACTIVE ION ETCHING USING ELECTRON-CYCLOTRON RESONANCE HYDROGEN PLASMA WITH N-BUTYL ACETATE REACTIVE GAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (03): : 932 - 937
- [2] Reactive ion beam etching of indium phosphide in electron cyclotron resonance plasma using methane/hydrogen/nitrogen mixtures Sendra, Jose Ramon, 1600, JJAP, Minato-ku, Japan (33):
- [3] Mechanism of reactive ion etching lag in WSi2 etching using electron cyclotron resonance plasma Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (4 B): : 2170 - 2174
- [4] COMPARISON OF DAMAGE IN THE DRY ETCHING OF GAAS BY CONVENTIONAL REACTIVE ION ETCHING AND BY REACTIVE ION ETCHING WITH AN ELECTRON-CYCLOTRON RESONANCE GENERATED PLASMA JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1462 - 1466
- [5] Reactive ion etching of transparent conducting tin oxide films using cyclotron resonance hydrogen plasma Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (09): : 1753 - 1756
- [6] REACTIVE ION ETCHING OF TRANSPARENT CONDUCTING TIN OXIDE-FILMS USING ELECTRON-CYCLOTRON RESONANCE HYDROGEN PLASMA JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09): : L1753 - L1756
- [7] MECHANISM OF REACTIVE ION ETCHING LAG IN WSI2 ETCHING USING ELECTRON-CYCLOTRON-RESONANCE PLASMA JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4B): : 2170 - 2174
- [8] Effects of bias frequency on reactive ion etching lag in an electron cyclotron resonance plasma etching system JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03): : 664 - 667
- [9] Effect of N2 addition on aluminum alloy etching by electron cyclotron resonance reactive ion etching and magnetically enhanced reactive ion etching Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (4 B): : 2147 - 2151