Reactive ion beam etching of indium phosphide in electron cyclotron resonance plasma using methane/hydrogen/nitrogen mixtures

Reactive ion beam etching of indium phosphide in electron cyclotron resonance plasma using methane/hydrogen/nitrogen mixtures has been performed. This etch chemistry provides a clean process with no polymer deposition. With etching at an ion acceleration voltage of 300 V, mirrorlike etched surfaces are obtained with donor passivation of about 10%. The electrical damage zone is restricted to a depth of 20 nm. Chemical etching limited by sputter-induced desorption of etch products of low volatility is proposed as the etch mechanism.