Surface modification of Si(1 1 1) substrates with SiNx for the growth of high quality β-SiC epilayers

被引:0
|
作者
Chonbuk Natl Univ, Chonju, Korea, Republic of [1 ]
机构
来源
J Cryst Growth | / 4卷 / 841-848期
关键词
Number:; -; Acronym:; KOSEF; Sponsor: Korea Science and Engineering Foundation;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Growth of BxAl1-xN layers using decaborane on SiC substrates
    Nakajima, A
    Furukawa, Y
    Yokoya, H
    Yonezu, H
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 437 - 442
  • [42] Investigation of β-SiC precipitation in Si1-yCy epilayers by x-ray scattering at grazing incidence
    Kovats, Z
    Metzger, TH
    Peisl, J
    Stangl, J
    Mühlberger, M
    Zhuang, Y
    Schäffler, F
    Bauer, G
    APPLIED PHYSICS LETTERS, 2000, 76 (23) : 3409 - 3411
  • [43] Epitaxial growth of high quality AlN films on Si substrates
    Yang, Meijuan
    Wang, Wenliang
    Lin, Yunhao
    Yang, Weijia
    Li, Guoqiang
    MATERIALS LETTERS, 2016, 182 : 277 - 280
  • [44] Selective growth of high quality GaN on Si(111) substrates
    Seon, M
    Prokofyeva, T
    Holtz, M
    Nikishin, SA
    Faleev, NN
    Temkin, H
    APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1842 - 1844
  • [45] The epitaxial growth of (1 1 1) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface
    Yang, Chen
    Chen, Zhiming
    Hu, Jichao
    Ren, Zhanqiang
    Lin, Shenghuang
    MATERIALS RESEARCH BULLETIN, 2012, 47 (06) : 1331 - 1334
  • [46] Lattice mismatch and surface morphology studies of InxGa1−xAs epilayers grown on GaAs substrates
    R Pal
    M Singh
    R Murlidharan
    S K Agarwal
    D Pal
    D N Bose
    Bulletin of Materials Science, 1998, 21 : 313 - 316
  • [47] Lattice mismatch and surface morphology studies of InxGa1-xAs epilayers grown on GaAs substrates
    Pal, R
    Singh, M
    Murlidharan, R
    Agarwal, SK
    Pal, D
    Bose, DN
    BULLETIN OF MATERIALS SCIENCE, 1998, 21 (04) : 313 - 316
  • [48] THE GROWTH OF HIGH-QUALITY CDXHG1-XTE BY MOVPE ONTO GAAS SUBSTRATES
    GIESS, J
    GOUGH, JS
    IRVINE, SJC
    BLACKMORE, GW
    MULLIN, JB
    ROYLE, A
    JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 120 - 125
  • [49] Modification in Si surface Using Ar11+ and A1+
    Liu, Shengjin
    Sakurai, Makoto
    Asakura, Ken
    Iida, Naoyuki
    Tona, Masahide
    Terui, Toshifumi
    18TH INTERNATIONAL VACUUM CONGRESS (IVC-18), 2012, 32 : 173 - 178
  • [50] Growth and evaluation of Cd1-yZnyTe epilayers on (100) GaAs substrates by hot wall epitaxy
    Koo, Bonheun
    Wang, Jifeng
    Ishikawa, Yukio
    Isshiki, Minoru
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1998, 37 (10): : 5674 - 5679