共 50 条
- [31] Comparison of arsenic diffusion in Si and Si1-xGex epilayers SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 211 - 214
- [32] Growth of H1-x(Cd1-yZny)xTe epilayers on (100) Cd1-yZnyTe/GaAs substrates by ISOVPE MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 66 (1-3): : 70 - 74
- [34] Growth and characterization of pseudomorphic Ge1-yCy and Si1-yCy alloy layers on Si substrates SURFACE/INTERFACE AND STRESS EFFECTS IN ELECTRONIC MATERIALS NANOSTRUCTURES, 1996, 405 : 87 - 92
- [35] Improving surface smoothness and photoluminescence of CdTe(1 1 1)A on Si(1 1 1) substrates grown by molecular beam epitaxy using Mn atoms Wang, J.-S. (jswang@cycu.edu.tw), 1600, Elsevier Ltd (592):
- [36] Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 1392 - 1395
- [37] Disilane and trimethylsilane as precursors for RP-CVD growth of Si1-yCy epilayers on Si(001) 2015 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2015, : 225 - 228
- [40] On the growth of high quality relaxed Si1-xGex layers on Si by vapour phase epitaxy MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, 1997, (157): : 135 - 144