Si2H6 doping of InP in gas-source molecular beam epitaxy using triethylindium and phosphine

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作者：
Ando, Hideyasu [1 ]
Okamoto, Naoya [1 ]
Sandhu, Adarsh [1 ]
Fujii, Toshio [1 ]
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[1] Fujitsu Lab Ltd, Atsugi, Japan
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| 1600年 / 30期
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