Si2H6 doping of InP in gas-source molecular beam epitaxy using triethylindium and phosphine

被引：0

作者：

Ando, Hideyasu ^{[1
]}

Okamoto, Naoya ^{[1
]}

Sandhu, Adarsh ^{[1
]}

Fujii, Toshio ^{[1
]}

机构：

[1] Fujitsu Lab Ltd, Atsugi, Japan

来源：

| 1600年 / 30期

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[21] Prediction of concentration profile for P doping in Si gas-source molecular beam epitaxy
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