Si2H6 doping of InP in gas-source molecular beam epitaxy using triethylindium and phosphine

被引：0
|
作者：
Ando, Hideyasu [1 ]
Okamoto, Naoya [1 ]
Sandhu, Adarsh [1 ]
Fujii, Toshio [1 ]
机构：
[1] Fujitsu Lab Ltd, Atsugi, Japan
来源：
| 1600年 / 30期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [11] Effects of B doping on hydrogen desorption from Si(001) during gas-source molecular-beam epitaxy from Si2H6 and B2H6
    Kim, H
    Glass, G
    Park, SY
    Spila, T
    Taylor, N
    Abelson, JR
    Greene, JE
    APPLIED PHYSICS LETTERS, 1996, 69 (25) : 3869 - 3871
  • [12] Undoped silicon layers grown by gas source molecular beam epitaxy using Si2H6
    Yoshinobu, Tatsuo, 1600, (31):
  • [13] B-doped Si(001)2 × 1 gas-source molecular-beam epitaxy from Si2H6 and B2H6
    Univ of Illinois, Urbana, United States
    Vacuum, 8-10 (913-916):
  • [14] GAS SOURCE MOLECULAR-BEAM EPITAXY OF SI AND SIGE USING SI2H6 AND GEH4
    YAMADA, A
    TANDA, M
    KATO, F
    KONAGAI, M
    TAKAHASHI, K
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) : 1008 - 1012
  • [15] UNDOPED SILICON LAYERS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY USING SI2H6
    YOSHINOBU, T
    FUYUKI, T
    MATSUNAMI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (9A): : L1213 - L1215
  • [16] Growth of TlInGaAs on InP by gas-source molecular beam epitaxy
    Takenaka, Keiichi
    Asahi, Hajime
    Koh, Hideki
    Asami, Kumiko
    Gonda, Shun-Ichi
    Oe, Kunishige
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (2 B): : 1026 - 1028
  • [17] Growth of TlInGaAs on InP by gas-source molecular beam epitaxy
    Takenaka, K
    Asahi, H
    Koh, H
    Asami, K
    Gonda, S
    Oe, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B): : 1026 - 1028
  • [18] Ge surface segregation during Si1-xGex(011) gas-source molecular beam epitaxy from Si2H6 and Ge2H6
    Taylor, N
    Kim, H
    Greene, JE
    SURFACE SCIENCE, 2001, 475 (1-3) : 171 - 180
  • [19] Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy
    Imperial Coll, London, United Kingdom
    J Cryst Growth, 1-4 (214-222):
  • [20] Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy
    Joyce, BA
    Fernandez, JM
    Xie, MH
    Matsumura, A
    Zhang, J
    Taylor, AG
    JOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) : 214 - 222
12345