Impact ionization and light emission in GaAs metal-semiconductor field effect transistors

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[1] Neviani, A.
[2] Tedesco, C.
[3] Zanoni, E.
[4] Canali, C.
[5] Manfredi, M.
[6] Cetronio, A.
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Neviani, A. | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 74期
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MESFET devices;
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