Impact ionization and light emission in GaAs metal-semiconductor field effect transistors

被引:0
|
作者
机构
[1] Neviani, A.
[2] Tedesco, C.
[3] Zanoni, E.
[4] Canali, C.
[5] Manfredi, M.
[6] Cetronio, A.
来源
Neviani, A. | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 74期
关键词
MESFET devices;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [11] ELECTRON-BEAM MODULATION OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    WIEDER, HH
    DAVIS, NM
    FLESNER, LD
    APPLIED PHYSICS LETTERS, 1980, 37 (10) : 943 - 945
  • [12] SI-IMPLANTED INGAP/GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    HYUGA, F
    AOKI, T
    SUGITANI, S
    ASAI, K
    IMAMURA, Y
    APPLIED PHYSICS LETTERS, 1992, 60 (16) : 1963 - 1965
  • [13] HYSTERESIS IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS-I-TRANSISTORS-V CHARACTERISTICS
    LAU, WM
    JI, LJ
    LOWE, K
    TANG, W
    YOUNG, L
    CANADIAN JOURNAL OF PHYSICS, 1985, 63 (06) : 748 - 752
  • [14] POLYACETYLENE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    CHEN, YC
    CHENG, CC
    CHEN, MH
    HUANG, KC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9A): : 2101 - 2106
  • [15] CDTE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    DREIFUS, DL
    KOLBAS, RM
    HARRIS, KA
    BICKNELL, RN
    HARPER, RL
    SCHETZINA, JF
    APPLIED PHYSICS LETTERS, 1987, 51 (12) : 931 - 933
  • [16] Polyacetylene metal-semiconductor field-effect transistors
    Chen, Ying-Chung
    Cheng, Chien-Chuan
    Chen, Mao-Hsiung
    Huang, Kuang-Chin
    1600, (30):
  • [17] IMPACT IONIZATION IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH A LIGHTLY DOPED DRAIN STRUCTURE AND AN AL0.2GA0.8AS/GAAS HETEROBUFFER LAYER
    HARUYAMA, J
    KATANO, H
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (08) : 3913 - 3918
  • [18] Nonalloyed GaAs metal-semiconductor field effect transistor
    Lee, CT
    Huang, JH
    Tsai, CD
    SOLID-STATE ELECTRONICS, 2000, 44 (01) : 143 - 146
  • [19] NONLINEAR HIGH-FREQUENCY RESPONSE OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    ABELES, JH
    TU, CW
    SCHWARZ, SA
    BRENNAN, TM
    APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1620 - 1622
  • [20] WSIO.11 SCHOTTKY GATES FOR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    CALLEGARI, A
    SPIERS, GD
    MAGERLEIN, JH
    GUTHRIE, HC
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 2054 - 2058