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Impact ionization and light emission in GaAs metal-semiconductor field effect transistors
被引:0
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机构
:
[1]
Neviani, A.
[2]
Tedesco, C.
[3]
Zanoni, E.
[4]
Canali, C.
[5]
Manfredi, M.
[6]
Cetronio, A.
来源
:
Neviani, A.
|
1600年
/ American Inst of Physics, Woodbury, NY, United States卷
/ 74期
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:
MESFET devices;
D O I
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暂无
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