Impact ionization and light emission in GaAs metal-semiconductor field effect transistors

被引：0

作者：

机构：

[1] Neviani, A.

[2] Tedesco, C.

[3] Zanoni, E.

[4] Canali, C.

[5] Manfredi, M.

[6] Cetronio, A.

来源：

Neviani, A. | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 74期

关键词：

MESFET devices;

D O I：

暂无

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摘要：

引用

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