Application of zirconium silicon oxide films to an attenuated phase-shifting mask in ArF lithography

被引：0

作者：

Matsuo, Takahiro ^{[1
]}

Onodera, Toshio ^{[1
]}

Nakazawa, Keisuke ^{[1
]}

Ogawa, Tohru ^{[1
]}

Morimoto, Hiroaki ^{[1
]}

Haraguchi, Takashi ^{[2
]}

Fukuhara, Nobuhiko ^{[2
]}

Matsuo, Tadashi ^{[2
]}

Otaki, Masao ^{[2
]}

Takeuchi, Susumu ^{[2
]}

机构：

[1] Semiconduct. Leading Edge T., 292 Yoshida-cho, Yokohama, Kanagawa 244-0817, Japan

[2] Toppan Printing Co., Ltd., 4-2-3 Takanodai-minami, Kita-Katsushika, Saitama 345-8508, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 12 B期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：7004 / 7007

共 50 条

[41] Specification of the phase angle of a 6% attenuated PSM mask used in ArF lithography
Chang, CH
Schacht, J
Lin, BSM
Hung, KC
Huang, IH
OPTICAL MICROLITHOGRAPHY XVII, PTS 1-3, 2004, 5377 : 902 - 910
[42] Simulation of transmittance on the effect of resolution enhancement of 100 mn pattern with attenuated phase-shifting mask in 193 nm lithography
Lin, CM
PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY IX, 2002, 4754 : 437 - 443
[43] Fabrication and characterization of aluminum oxide/chromium oxide superlattice for attenuated phase-shifting mask working at 193 nm wavelength
Lai, FD
Wang, LA
THIN SOLID FILMS, 2002, 409 (02) : 220 - 226
[44] TiSixNy and TiSixOyNz as embedded materials for attenuated phase-shifting mask in 193 nm
Lin, CM
Loong, WA
MICROELECTRONIC ENGINEERING, 1999, 46 (1-4) : 93 - 96
[45] Resolution enhancement for advanced mask aligner lithography using phase-shifting photomasks
Weichelt, T.
Vogler, U.
Stuerzebecher, L.
Voelkel, R.
Zeitner, U. D.
OPTICS EXPRESS, 2014, 22 (13): : 16310 - 16321
[46] Ta-Si-O absorptive shifter for the attenuated phase-shifting mask
Yan, YS
Cheng, CC
Lin, CL
Gan, JY
Wu, TB
Tuo, LC
Wang, JJ
PHOTOMASK AND X-RAY MASK TECHNOLOGY III, 1996, 2793 : 155 - 164
[47] Optimization of stepper parameters and its design rule for attenuated phase-shifting mask
Kim, HE
Barnett, S
Shih, J
OPTICAL MICROLITHOGRAPHY XI, 1998, 3334 : 532 - 542
[48] TiSixNy and TiSixOyNz as embedded materials for attenuated phase-shifting mask in 193 nm
Institute of Applied Chemistry, National Chiao Tung University, Hsin-Chu 300, Taiwan
Microelectron Eng, 1 (93-96):
[49] High-transmission attenuated phase-shift mask for ArF immersion lithography
Kojima, Yosuke
Mizoguchi, Takashi
Haraguchi, Takashi
Konishi, Toshio
Okuda, Yoshimitsu
PHOTOMASK TECHNOLOGY 2006, PTS 1 AND 2, 2006, 6349
[50] Impact of polarization for an attenuated phase shift mask with ArF hyper-NA lithography
Sato, T
Endo, A
Mimotogi, A
Mimotogi, S
Sato, K
Tanaka, S
Optical Microlithography XVIII, Pts 1-3, 2005, 5754 : 1063 - 1069

← 1 2 3 4 5 →