Application of zirconium silicon oxide films to an attenuated phase-shifting mask in ArF lithography

被引：0

作者：

Matsuo, Takahiro ^{[1
]}

Onodera, Toshio ^{[1
]}

Nakazawa, Keisuke ^{[1
]}

Ogawa, Tohru ^{[1
]}

Morimoto, Hiroaki ^{[1
]}

Haraguchi, Takashi ^{[2
]}

Fukuhara, Nobuhiko ^{[2
]}

Matsuo, Tadashi ^{[2
]}

Otaki, Masao ^{[2
]}

Takeuchi, Susumu ^{[2
]}

机构：

[1] Semiconduct. Leading Edge T., 292 Yoshida-cho, Yokohama, Kanagawa 244-0817, Japan

[2] Toppan Printing Co., Ltd., 4-2-3 Takanodai-minami, Kita-Katsushika, Saitama 345-8508, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 12 B期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：7004 / 7007

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