Trace determination of iron on a silicon wafer surface by silicon direct bonding and neutron activation analysis

被引：0
|
作者：
Shigematsu, T. [1 ]
Polasek, M. [1 ]
Yonezawa, H. [1 ]
机构：
[1] NTT Interdisciplinary Research Laboratories, Nippon Telegraph and Telephone Corporation, Tokai, Ibaraki-ken, 319-11, Japan
来源：
Journal of Radioanalytical and Nuclear Chemistry | 1996年 / 203卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：3 / 9
相关论文
共 50 条
  • [41] TUNNELING STRUCTURES FABRICATED BY SILICON-WAFER DIRECT BONDING
    STENGL, R
    AHN, KY
    MII, T
    YANG, WS
    GOSELE, U
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (12): : 2405 - 2412
  • [42] Crystalline defects in InP-to-silicon direct wafer bonding
    Pasquariello, D.
    Camacho, M.
    Ericsson, F.
    Hjort, K.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (08): : 4837 - 4844
  • [43] Measurement method of bond strength for silicon direct wafer bonding
    Chen, Liguo
    Chen, Tao
    Sun, Lining
    2006 IEEE INTERNATIONAL CONFERENCE ON INFORMATION ACQUISITION, VOLS 1 AND 2, CONFERENCE PROCEEDINGS, 2006, : 1021 - 1025
  • [44] Crystalline defects in InP-to-silicon direct wafer bonding
    Pasquariello, D
    Camacho, M
    Ericsson, F
    Hjort, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (08): : 4837 - 4844
  • [45] Silicon wafer direct bonding without hydrophilic native oxides
    Himi, Hiroaki
    Matsui, Masaki
    Fujino, Seiji
    Hattori, Tadashi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (1 A): : 6 - 10
  • [46] Point defects generated by direct-wafer bonding of silicon
    Dózsa, L
    Szentpáli, B
    Pasquariello, D
    Hjort, K
    JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (02) : 113 - 118
  • [47] Method of bond strength evaluation for silicon direct wafer bonding
    Spivak, A
    Avagyan, A
    Davies, B
    MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY VII, 2001, 4557 : 165 - 173
  • [48] Silicon micromachined switch using direct wafer bonding technology
    Chandra, S
    Chand, A
    Singh, J
    Singh, J
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 617 - 620
  • [49] Point defects generated by direct-wafer bonding of silicon
    L. Dózsa
    B. Szentpáli
    D. Pasquariello
    K. Hjort
    Journal of Electronic Materials, 2002, 31 : 113 - 118
  • [50] SILICON-WAFER DIRECT BONDING THROUGH THE AMORPHOUS LAYER
    FUJINO, S
    MATSUI, M
    HATTORI, T
    HAMAKAWA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (10B): : L1322 - L1324
12345