Cryogenic operation of heavy ion implanted N- and P-channel MOSFETs

被引：0
|
作者：
LPCS, Grenoble, France [1 ]
机构：
来源：
J Phy IV JP | / 3卷 / Pr3-37-40期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] A Comparative Study on Heavy-Ion Irradiation Impact on p-Channel and n-Channel Power UMOSFETs
    Wang, Ying
    Yu, Cheng-Hao
    Li, Xing-Ji
    Yang, Jian-Qun
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 69 (06) : 1249 - 1256
  • [32] Degradation Characteristics of n- and p-Channel Polycrystalline-Silicon TFTs Under CMOS Inverter Operation
    Toyota, Yoshiaki
    Matsumura, Mieko
    Hatano, Mutsuko
    Shiba, Takeo
    Ohkura, Makoto
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (02) : 429 - 436
  • [33] P-Channel MOSFETs on Phosphorous-Doped n-Type Diamond
    Zhao, Wen
    Koizumi, Satoshi
    Liao, Meiyong
    IEEE ELECTRON DEVICE LETTERS, 2024, 45 (12) : 2268 - 2271
  • [34] P-CHANNEL MOSFETS WITH ULTRATHIN N2O GATE OXIDES
    LO, GQ
    TING, W
    AHN, J
    KWONG, DL
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (02) : 111 - 113
  • [35] Analysis of near-IR photon emissions from 50-nm n- and p-channel Si MOSFETs
    de Luna, NC
    Bailon, MF
    Tarun, AB
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (06) : 1211 - 1214
  • [36] Performances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature
    Achour, H.
    Cretu, B.
    Routoure, J. -M.
    Carin, R.
    Benfdila, A.
    Simoen, E.
    Claeys, C.
    2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 2014, : 181 - 184
  • [37] Comparison between nonlinear characteristics of N-channel and P-channel FD SOI MOSFETs
    Conde, JE
    Cerdeira, A
    Flandre, D
    ICCDCS 2004: Fifth International Caracas Conference on Devices, Circuits and Systems, 2004, : 122 - 125
  • [38] On the determination of the time-dependent degradation laws and device lifetime in deep submicron n- and p-channel SOI MOSFETs
    Renn, SH
    Balestra, F
    MICROELECTRONICS RELIABILITY, 1998, 38 (12) : 1817 - 1822
  • [39] CONSISTENT MODEL FOR THE HOT-CARRIER DEGRADATION IN N-CHANNEL AND P-CHANNEL MOSFETS
    HEREMANS, P
    BELLENS, R
    GROESENEKEN, G
    MAES, HE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2194 - 2209
  • [40] ANNEALING CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS
    NAKAMURA, K
    KAMOSHID.M
    JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4262 - 4267
12345