Velocity saturation in the collector of Si/Gex Si1-x/Si HBT's

被引：0
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作者：
Cottrell, Peter E. [1 ]
Yu, Zhiping [1 ]
机构：
[1] Center for Integrated Syst, Stanford, Univ, CA, USA
来源：
Electron device letters | 1990年 / 11卷 / 10期
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页码：431 / 433
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