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- [1] Modelling of Ge Concentration Effects on Carrier Mobility in Si1-x Gex HBTs 2013 IEEE CONFERENCE ON INFORMATION AND COMMUNICATION TECHNOLOGIES (ICT 2013), 2013, : 671 - 674
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- [5] Quantum interference and spin-splitting effects in Si1-X GeX p-type quantum well MOLECULAR NANOWIRES AND OTHER QUANTUM OBJECTS, 2004, 148 : 319 - 328
- [6] Dopant concentration effects on Si1-x\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_{1-x}$$\end{document}Gex\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_{x}$$\end{document} crystals for emerging light-source technologies: a molecular dynamics study The European Physical Journal D, 2024, 78 (6)
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- [9] MODULATION DOPING IN GE(X)SI(1-X)/SI STRAINED LAYER HETEROSTRUCTURES - EFFECTS OF ALLOY LAYER THICKNESS, DOPING SETBACK, AND CLADDING LAYER DOPANT CONCENTRATION JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 846 - 850