Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC

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Davydov, V. Yu.
Averkiev, N.S.
Goncharuk, I.N.
Nelson, D.K.
Nikitina, I.P.
Polkovnikov, A.S.
Smirnov, A.N.
Jacobson, M.A.
Semchinova, O.K.
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| 1997年 / 82期
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