Epitaxial 6H-SiC layers as defectors of nuclear particles

被引：3

作者：

Lebedev, AA ^{[1
]}

Savkina, NS ^{[1
]}

Ivanov, AM ^{[1
]}

Strokan, NB ^{[1
]}

Davydov, DV ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Physicotech Inst, RU-194021 St Petersburg, Russia

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

alpha particles spectroscopy; amplitude spectrum; diffusion length; energy of electron-hole pair formation; nonuniformity of lifetime; sublimation epitaxy;

D O I：

10.4028/www.scientific.net/MSF.338-342.1447

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Schottky diodes based on n-n(+) 6H-SiC epitaxial layers grown by sublimation epitaxy were used for registration of alpha particles Cm-244. Specific features of nonequilibrium charge transfer were studied in regimes of total and partial structure depletion. A relationship was revealed between film characteristics and the dependence of the signal amplitude and the shape of the amplitude spectrum on diode bias.

引用

页码：1447 / 1450

页数：4

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